CMOS/VLSI Circuit for Power Optimization on Portable Devices
R. SambaSiva Nayak1, MD Javeed Ahammed2, B. Satyanarayana3, Nayeemuddin Mohammad4
1R.SambaSiva Nayak*, Department of ECE, Sri Satya Sai University of Technology and Medical Science, Sehore, Bhopal, Madhya Pradesh, India.
2MD Javeed Ahammed, Department of ECE, Sri Satya Sai University of Technology and Medical Science, Sehore, Bhopal, Madhya Pradesh, India.
2B. Satyanarayana, Department of ECE, Sri Satya Sai University of Technology and Medical Science, Sehore, Bhopal, Madhya Pradesh, India.
4Nayeemuddin Mohammad, Department of ECE, Sri Satya Sai University of Technology and Medical Science, Sehore, Bhopal, Madhya Pradesh, India
Manuscript received on September 15, 2019. | Revised Manuscript received on 24 September, 2019. | Manuscript published on October 10, 2019. | PP: 4300-4303 | Volume-8 Issue-12, October 2019. | Retrieval Number: L27161081219/2019©BEIESP | DOI: 10.35940/ijitee.L2716.1081219
Open Access | Ethics and Policies | Cite | Mendeley | Indexing and Abstracting
© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: In this day and age utilizing convenient gadgets are chiefly being used which turned out to be every day need in our life’s in which control utilization is principle situation which requests low power. This should be possible with procedures and principles while planning. To build control utilization through VLSI innovation CMOS (NMOS, PMOS) Transistor circuits are utilized and the sub-micron innovation likewise utilized for the prerequisite of low power gadgets increments altogether. Spillage current and power dispersal in both static and dynamic must be thought about which can bother the gadget execution. This paper presents strategies to lessen the power scattering and different philosophies to expand the speed of gadget. This can be useful in future low power innovation.
Keywords: Leakage Current, Dynamic Power Dissipation, CMOS, Static Power Dissipation.
Scope of the Article: Foundations Dynamics