Realization of Memory Effect on Hysteresis Lobe Area of the TiO2 Based HP Memristor
Nune Pratyusha1, Santanu Mandal2
1Nune Pratyusha, Research Scholar, School of Sciences and Languages, Vellore Institute of Technology-AP, Amaravati, India.
2Santanu Mandal*, Ph.D., Assistant Professor(Senior), School of Sciences and Languages, Vellore Institute of Technology-AP, Amaravati, India.
Manuscript received on September 14, 2019. | Revised Manuscript received on 23 September, 2019. | Manuscript published on October 10, 2019. | PP: 321-324 | Volume-8 Issue-12, October 2019. | Retrieval Number: K19820981119/2019©BEIESP | DOI: 10.35940/ijitee.K1982.1081219
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Abstract: In this paper, the memory effect on the hysteresis lobe area of TiO2 based memristive model is studied. The Green’s theorem is used to derive the novel general formula for the area of hysteresis lobe of HP memristor model. Further the memory and boundary values are derived mathematically, where the memory needs to be stable. It is analyzed that in the initial state this nanoscale non-volatile memristor retains its memory. The relation of memory with the lobe area and memristance are also established respectively. The analytical results mentioned above are demonstrated by numerical simulations and graphical representations.
Keywords: HP Memristor, Non-volatile Memory, Hysteresis Loop, Green’s Theorem, Neuromorphic Computing.
Scope of the Article: Cloud Computing