Development of Analog Behavioural Model of Bi MOSFET
Harini. V1, Mahesh Acharya2, A. Vijayakumari3
1Harini. V, Student, Amrita Vishwa Vidyapeetham, Coimbatore (Tamil Nadu), India.
2Mahesh Acharya, SO/E, Raja Ramanna Center for advanced Technology, Indore (M.P.), India.
3A. Vijayakumari, Assoc. Professor, Amrita Vishwa Vidyapeetham, Coimbatore (Tamil Nadu), India.
Manuscript received on 21 June 2019 | Revised Manuscript received on 05 July 2019 | Manuscript published on 30 July 2019 | PP: 1128-1131 | Volume-8 Issue-9, July 2019 | Retrieval Number: I7880078919/19©BEIESP | DOI: 10.35940/ijitee.I7880.078919
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Abstract: Behavioural modelling of a power semiconductor device offers many advantages to an application engineer as it is possible to model the device from the available datasheet without a detailed knowledge of the fabrication process. The development of an analog behavioural model for a BiMOSFET is undertaken here by using the Hammerstein model. The Hammerstein model is developed with static and dynamic block sub-blocks and is designed to respond for varying temperatures.The datasheet values of Ic and Vceare utilized to derive the static linear block,while the dynamic block is modelled as Hammerstein current source.The developed model of the BiMOSFET has been verified for its terminal characteristics through OrCAD simulations and hardware testing. The developed model of BiMOSFETexhibits fast simulation times with reasonable accuracy. The hardware testing is carriedout with BiMOSFET IXBF55N300 by observing its currents and voltages under the variation of gate voltage at constant collector emitter voltage and variation of collector emitter voltage at constant gate voltage.
Keywords: Analog Behavioural Model, Bi MOSFET
Scope of the Article: Mobile App Design and Development