Parameters for Stability of Reconfigurable Memory and 6T SRAM Cell
Tejinder Kaur1, Rachna Manchanda2, Chanpreet Kaur3
1Tejinder Kaur, Department of Electronics and Communication Engineering, Chandigarh Group of Colleges, Landran (Mohali), India.
2Rachna Manchanda, Department of Electronics and Communication Engineering, Chandigarh Group of Colleges, Landran (Mohali), India.
3Chanpreet Kaur, Department of Electronics and Communication Engineering, Chandigarh Group of Colleges, Landran (Mohali), India.
Manuscript received on 08 August 2019 | Revised Manuscript received on 14 August 2019 | Manuscript Published on 26 August 2019 | PP: 887-892 | Volume-8 Issue-9S August 2019 | Retrieval Number: I11430789S19/19©BEIESP | DOI: 10.35940/ijitee.I1143.0789S19
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open-access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: As the technology is improving, channel length of MOSFET is scaling down. In this environment stability of SRAM becomes the major concern for future technology. Static noise margin (SNM) plays a vital role in stability of SRAM. This paper gives an introduction to the reconfigurable memory and 6T SRAM cell. It includes the implementation, characterization and analysis of reconfigurable memory cell and its comparison with the conventional 6T SRAM cell for various parameters like read margin, write margin, data retention voltage, temperature and power supply fluctuations and depending upon these analysis we find SNM for 6T and 8T SRAM cell. The tool used for simulation purpose is IC Station by Mentor Graphics using 350nm technology at supply voltage of 2.5volts.
Keywords: SNM, 6T SRAM, DRV, CR, 8T SRAM.
Scope of the Article: Communication