Design and Modelling of High Sensitivity Dual Gate MOSFET Integrated MEMS Microphone
N. Siddaiah1, D.Venkatesh2, P. Sri Surendra3, N. Vijitha4
1N.Siddaiah, Department of E.C.E, Koneru Lakshmaiah Education Foundation, Vaddeswaram (A.P), India.
2D.Venkatesh, Department of E.C.E, Koneru Lakshmaiah Education Foundation, Vaddeswaram (A.P), India.
3P.Sri Surendra, Department of E.C.E, Koneru Lakshmaiah Education Foundation, Vaddeswaram (A.P), India
4N.Vijitha, Department of E.C.E, Koneru Lakshmaiah Education Foundation, Vaddeswaram (A.P), India
Manuscript received on 01 May 2019 | Revised Manuscript received on 15 May 2019 | Manuscript published on 30 May 2019 | PP: 393-397 | Volume-8 Issue-7, May 2019 | Retrieval Number: G5404058719/19©BEIESP
Open Access | Ethics and Policies | Cite | Mendeley | Indexing and Abstracting
© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: We proposed double gate (DG) design for microphone by using MEMS technology where diaphragm acts as the sliding gate of transistor and it is existed and used for some applications. The main purpose of using the dual gate (DG-MOSFET) is to integrated MEMS microphone. The analysis is to increase the electrical and mechanical sensitivity of MEMS microphone by using dual gate FET. In single gate we can improve the sensitivity’s like electrical and mechanical but in designing they implemented only electrical sensitivity . We actualized a technique for expanding the general affectability of the receiver by expanding its electrical affectability. FET can be used to heighten the flag or to change over yield impedance .In subthreshold locale the channel current relies upon the distinction between entryway to source voltage and subthreshold voltage in the proposed mouthpiece.The design had made more reactive by including mechanical design to the main terminal
Keyword: Microphone, FET Field Effective Transistor, Sensitivity, DG_MOSFET.
Scope of the Article: Software Design Patterns.