G10620587S19

Evaluation of Bond Shear Strength of Heat Treated Cu-Al Bonding Interface
S. Shariza¹, T. Joseph Sahaya Anand², Chua Kok Yau³, Lim Boon Huat⁴, Lee Cher Chia⁵

¹S. Shariza, Faculty of Manufacturing Engineering, University Teknikal Malaysia Melaka, Melaka, Malaysia.

²T. Joseph Sahaya Anand, Faculty of Manufacturing Engineering, University Teknikal Malaysia Melaka, Melaka, Malaysia.

³Chua Kok Yau, Nfineon Technologies, Malaysia Sdn. Bhd., Melaka, Malaysia.

⁴Lim Boon Huat, Nfineon Technologies, Malaysia Sdn. Bhd., Melaka, Malaysia.

⁵Lee Cher Chia, Infineon Technologies, Malaysia Sdn. Bhd., Melaka, Malaysia.

Manuscript received on 04 May 2019 | Revised Manuscript received on 09 May 2019 | Manuscript Published on 13 May 2019 | PP: 346-353 | Volume-8 Issue-7S May 2019 | Retrieval Number: G10620587S19/19©BEIESP

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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open-access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: Ball shear strength of the thermosonic wire bond interconnection relates closely to the reliability of the microchip during performance of its function in any application. Concerns regarding the reliability of Cu wired electronic microchips are raised due to formation of void at the copper (Cu) wirealuminium (Al) bond pad bonding interface, predominantly after high temperature storage (HTS) annealing conditions. The interfacial void formation is suspected originated from a volumetric shrinkage during the growth of the Cu-Al intermetallic compound (IMC) layer in the Cu–Al bonding interface. In this report, the ball shear strength and interfacial microstructure of the thermosonic Cu wire-Al bond pad system bonded at difference temperature (150 °C, 280 °C and 400 °C); and annealed at different HTS durations (as-synthesized, 500 hours and 1000 hours) were studied. It was observed no significant difference in the mean of the ball shear strength of bonds bonded at different temperature before HTS treatment. On the other hand, the ball shear strength increase with the HTS duration. This is due to the fact that higher bonding temperature and longer HTS promoted better growth of the Cu-Al IMC layer. A transmission electron microscopy – energy dispersive X-ray analysis (TEM-EDX) has also been carried out to observe the formation of the Cu-Al IMC layer in the sample.

Keywords: Wire Bonding, Cu-Al Intermetallic Compound (IMC), High Temperature Storage (HTS), Wire Pull Test, Ball Shear Test.
Scope of the Article: Manufacturing Processes