Simulation Study of Multi-Layered Active Region Uv Photo- Detector for High Efficient Photoactive Semiconductors
A.Alfred Kirubaraj1, S. Senith2, Jerrin Issac Sam S3, P.S. Athira4, S.R.Jino Ramson5
1A.Alfred Kirubaraj, Department of ECE, Karunya Institute of Technology and Sciences, Coimbatore (Tamil Nadu), India.
2Athira, Department of ECE, Karunya Institute of Technology and Sciences, Coimbatore (Tamil Nadu), India.
3S.Senith, MBA, Karunya Institute of Technology and Sciences, Coimbatore (Tamil Nadu), India.
4Jerrin Issac Sam, MBA, Karunya Institute of Technology and Sciences, Coimbatore (Tamil Nadu), India.
5Jino Ramson, Engineering Technology, Purdue University, USA.
Manuscript received on 07 March 2019 | Revised Manuscript received on 20 March 2019 | Manuscript published on 30 March 2019 | PP: 835-840 | Volume-8 Issue-5, March 2019 | Retrieval Number: E3109038519/19©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: UV photo-detective transducers converts light energy in the range of 40 nm to 400 nm into electrical output with high visible rejection ratio. Recently, a study is done to reduce the thickness of active layer with a high refractive index metal layer in between low refractive index oxide layer. In this paper, we present a novel method in designing a thin-layered TiO2 /Ag/TiO2 (TAT structure) active region photo-detector with Pt metal electrodes. The designed 2D structure with TiO2 and 3D structure with TAT as active layer are developed with semiconductor and Opto-electronics module. The developed design shows considerably high output current response of 0.077 A/W and 4.9 A/W with 5 V as applied bias for TiO2 and TAT active region respectively. Also, the study on dark current is modelled through MATLAB. The simulation study shows, the variation in dark current response with respect to work function of metal electrode and thickness of TAT layer. The proposed TAT structure develops less leakage current of 4.6284 nA as compared to the conventional structure producing in micro ampere range. Hence the proposed designed structure with high output current response with less dark current can be applied in high sensitivity sensor, thin film solar cells, photo active semiconductors and in photonics.
Keyword: Photo- Detector, Tio2, TAT, Pt Electrodes.
Scope of the Article: Network Modelling and Simulation