Carbon Nanotube Field Effect Transistor: Fabrication of Thin Film of SiO2-Based Micro Cantilevers Dielectric Layer between the Channel and Substrate by Anisotropic Chemical Etching of (100) Single Crystal Si
Kuldeep Niranjan1, Sanjay Srivastava2, Jaikaran Singh3, Mukesh Tiwari4
1Kuldeep Niranjan, M.Tech Scholar (VLSI), SSSIST, Sehore (M.P.), India.
2Dr. Sanjay Srivastava, Professor, Department of Msme, Manit, Bhopal (M.P.), India.
3Prof. Jaikaran Singh, Professor & Head, Depatment of Electronics and Communication, SSSIST, Sehore (M.P.), Inida.
4Prof. Mukesh Tiwari, Dean Academic, SSSIST, Sehore (M.P.), Inida.
Manuscript received on October 01, 2012. | Revised Manuscript received on October 20, 2012. | Manuscript Published on September 10, 2012. | PP: 67-71 | Volume-1 Issue-4, September 2012. | Retrieval Number: D0267081412/2012©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: The performance of the CNT-FET with variable channel length was modified by using the micro-cantilever, micro-bridge of SiO2. The etching technique was used to prepare the micro cantilever of SiO2 from the Si-substrate. We focus the idea about for the fabrication of the nano-device, in order to reduce the dielectric layer thickness. The channel length of the FET was altered along with the dimension of the substrate. One of the possibilities to reduce the thickness of the dielectric layer is either by etching processes or growing the oxide layer from the substrate through etching process. In this case Laser leaching process was used to reduce the thickness of the substrate. Various electrical properties like gate voltage, drain current, mobility, and device performance have been investigated. A better I-V characteristic was obtained with higher mobility in between the channel and used dielectric layer.
Keywords: Anisotropy, CNT-FET, Lateral growth, Micro-cantilever.