Capacitance determination of a Vertical Parallel Junction Solar Cell under Multispectral Illumination in Steady State
Ali Hamidou1, Amadou Diao2, Séré Ahmed Douani3, ali Moissi4, Moustapha Thiame5, Fabé Idrissa Barro6, Grégoire Sissoko7
1Mr. Ali Hamidou, Department of Physics, FST-UCAD, Dakar, Senegal.
2Dr. Amadou Diao, Department of Physics, FST-UCAD, Dakar, Senegal.
3Mr. Ali Moissi M’madi, Department of Physics, FST-UCAD, Dakar, Senegal.
4Mr. Ahmed Douani Séré, Polytechnic University, Bobo Dioulasso, Burkina Faso.
5Dr. Fabé Idrissa Barro, Department of Physics, FST-UCAD, Dakar, Senegal.
6Prof. Grégoire Sissoko, Department of Physics, FST-UCAD, Dakar, Senegal.
7Séré Ahmed Douani, Department of Physics, FST-UCAD, Dakar, Senegal.
Manuscript received on 07 February 2013 | Revised Manuscript received on 21 February 2013 | Manuscript Published on 28 February 2013 | PP: 12-14 | Volume-2 Issue-3, February 2013 | Retrieval Number: C0400022313/2013©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: A theoretical study of a vertical junction silicon solar cell under multispectral illumination in steady state is presented. From the excess minority carrier’s density in the base of the cell, the photocurrent density, the photovoltage, the diffusion capacitance and the dark capacitance were determined. All these parameters are studied according to the illumination level effect.
Keywords: Vertical junction, solar cell, capacitance.
Scope of the Article: Bio-Science and Bio-Technology