Design and Analysis of Memristor Memory Cell Using Different Windowing Functions
K. Paramasivam1, R. Sathiya Priya2, V. Saminathan3
1Dr. K. Paramasivam, Professor, Department of Electrical and Electronics Engineering, Kumaraguru College of Technology, Coimbatore (TamilNadu), India.
2R. Sathiya Priya, PG Scholar, Department of Electronics and Communication Engineering, Kumaraguru College of Technology, Coimbatore (TamilNadu), India.
3V. Saminathan, Assistant Professor, Department of Electronics and Communication Engineering, Maharaja Engineering College, Avinashi, Tamil Nadu, India.
Manuscript received on 01 December 2018 | Revised Manuscript received on 06 December 2018 | Manuscript Published on 26 December 2018 | PP: 201-205 | Volume-8 Issue- 2S2 December 2018 | Retrieval Number: BS2041128218/19©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open-access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: In recent years, rapid growth of battery operated devices has made the low power memory design a desire in the industry. As the number of transistor increases, the leakage current has made the SRAM unit a power hungry block from both the static and dynamic perspectives. Nowadays, the SRAM block is an important part in SOC design. For memory design, the power dissipation and area are the main factors. Alternative technologies are needed to meet recent challenges in memory design. Memory cell can be designed by using memristor whose memristance M is function of charge q in it. Memristor is passive non-linear device that controls the current and able to retain the charge in it. Hence, memristor is considered as resistor with non-linear characteristics and memorizing feature. In this project Memristor and its performance is analysed by using two different window functions in MATLAB. Hysteresis curve is obtained for analysis. Memristor based memory cell is designed using memristor with proposed window function to analyse the performance using LT in 180nm technology. Peak and average power results are compared. It shows that 94% of power is reduced in the proposed memory cell.
Keywords: SRAM, Memristor, Hysteresis, Window Function, non Volatile Memory.
Scope of the Article: Communication