Impact of Structural Aspect, Metal Gate and Channel Material on UTB-SOI-MOSFET
Pradip Kumar Nanda1, Shiva Prasad Das2, Soumya Ranjan Panda3, Debabrata Singh4
1Pradip Kumar Nanda*, Department of ECE, SOA Deemed to be University, Odisha, India.
2Shiva Prasad Das, AVIN System Pvt.Ltd, Banglore,
3Soumya Ranjan Panda, Dept. of ECE, University of Bordeaux, USA.
4Debabrata Singh, Dept. of CSIT, ITER, SOA Deemed to be University, BBSR
Manuscript received on October 12, 2019. | Revised Manuscript received on 22 October, 2019. | Manuscript published on November 10, 2019. | PP: 1638-1642 | Volume-9 Issue-1, November 2019. | Retrieval Number: A4643119119/2019©BEIESP | DOI: 10.35940/ijitee.A4643.119119
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: Ultra Thin Body Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistors (UTB-SOI-MOSFETs) provide better immunity to Short Channel Effects (SCEs). But the behaviour changes at miniaturization and still the many unexplored effects need to be analysied. Here in this paper, Drain Induced Barrier Lowering (DIBL) and sub-threshold Slope (SS) variation of a n-channel UTB-SOI-MOSFET have been analyzed by changing the device structural aspects like gate length (LG), BOX thickness (tBOX) and Silicon film thickness (tSi). Also, the effect of intrinsic parameters as metal gate work function and channel material variation on DIBL and sub-threshold Slope (SS) variation has been analyzed.
Keywords: UTB-SOI-MOSFETs, SCEs, DIBL, Sub-threshold Slope, BOX thickness
Scope of the Article: Structural Engineering