The Effect of Silicon-Organic Modifier of CdZnS/ZnS (GT) Quantum Dot with Wavelength 390 nm on cathodoluminescent mode
Majmaa Huda Khalid Hameed1, Sheshin E.P2
1Majmaa Huda Khalid Hameed*, Moscow Institute of Physics and Technology Institutsky per., Dolgoprudny, Moscow Region, Russian Federation
2Sheshin E.P., Moscow Institute of Physics and Technology 9 Institutsky per., Dolgoprudny, Moscow Region, Russian Federation
Manuscript received on October 12, 2019. | Revised Manuscript received on 23 October, 2019. | Manuscript published on November 10, 2019. | PP: 1411-1413 | Volume-9 Issue-1, November 2019. | Retrieval Number: A4110119119/2019©BEIESP | DOI: 10.35940/ijitee.A4110.119119
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Abstract: Surface modification of quantum Dots is very demanding to improve the optical properties of quantum Dots and it is generally carried out by depositing an organic or an inorganic layer on the quantum Dots. In this study the behavior of CdZnS/ZnS and CdZnS/ZnS (GT), both emitting at 390 nm, differ by silicon-organic additives studying in a vacuum chamber to find out their feature and to identify the luminescent of quantum Dots, under the action of electron bombardment to assess the capability of quantum Dots as phosphors for further use in vacuum electronics
Keywords: Quantum Dots, Core/shell Quantum Dots, Light Sources, Cathodoluminescence, Passivation, CdZnS/ZnS, CdZnS/ZnS (GT)
Scope of the Article: Nano electronics and Quantum Computing