Methods for Increasing the Radiation Resistance of 3D Integration Memory Modules for Aerospace Applications
R. S. Litvinenko1, I.V. Prokofiev2, V.M. Matveev3
1R.S. Litvinenko, Science Manufacturing Complex “Technological centre”, Moscow, Zelenograd, Russia.
2I.V. Prokofiev, Science Manufacturing Complex “Technological Centre”, Moscow, Zelenograd, Russia.
3V.M. Matveev, Science Manufacturing Complex “Technological Centre”, Moscow, Zelenograd, Russia.
Manuscript received on September 16, 2019. | Revised Manuscript received on 24 September, 2019. | Manuscript published on October 10, 2019. | PP: 3552-3553 | Volume-8 Issue-12, October 2019. | Retrieval Number: L26281081219/2019©BEIESP | DOI: 10.35940/ijitee.L2628.1081219
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: Space radiation effects in electronics are significantly important during the development of devices for aerospace applications. Radiation tolerant component base significantly lag behind the commercial chips with regard to operating speed, memory capacity and etc. The issue of commercial memory use in information storage devices is especially acute in conditions of high radiation. Within the framework on development of micromodule 3D integration technology for onboard equipment for aerospace applications, the study of the radiation effects influence on the operation of commercial NAND-Flash chips and methods of counteracting these effects are carried out.
Keywords: 3D Integration, Heavy Charged Particles, Micromodule, Radiation Tolerant Memory.
Scope of the Article: Aggregation, Integration, and Transformation