Mathematical Modeling and Simulation of Junction less Dual Material Double Gate MOSFET with Various Work Functions
S. Darwin1, T.S. Arun Samuel2, E. Muthu Kumaran3, J. Deny4
1S.Darwin*, Assistant Professor, Department of ECE, Dr. Sivanthi Aditanar College of Engineering, Tiruchendur, Tamil Nadu, India.
2Dr.T.S.Arun Samuel, Associate Professor, Department of ECE, National Engineering College, Kovilpatti, Tamil Nadu, India,
3Dr.E.Muthu Kumaran, Assistant Professor, Department of ECE, Dr.B.R.Ambedkar Institute of Technology, Port Blair, Andaman & Nicobar Islands, India.
4Dr. J. Deny, Associate Professor, Department of ECE, Kalasalingam Academy of Research and Education, Tamil Nadu, India.
Manuscript received on September 17, 2019. | Revised Manuscript received on 24 September, 2019. | Manuscript published on October 10, 2019. | PP: 3457-3460 | Volume-8 Issue-12, October 2019. | Retrieval Number: L26021081219/2019©BEIESP | DOI: 10.35940/ijitee.L2602.1081219
Open Access | Ethics and Policies | Cite | Mendeley | Indexing and Abstracting
© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: In view of the 2-Dimensional game plan of Poisson’s condition, a material science-based model of Double Gate Dual Material Junction less (DGDMJNL) Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is made. The advantages of different work capacities connected to the metals in DMDGJNL MOSFET are exhibited and the potential at the inside and qualities of the electric field is uncovered. The proposed model exhibits explicitly demonstrates the effect of the work in electrostatic potential and electric field. It is exhibited that the execution of DMDGJNL MOSFET can be changed by adjusting the channel length extents of control door and shield entryway. The model is assessed by its figured results and those got from a 3D TCAD test system for numerical outcomes.
Keywords: Junction Less Dual Material Gate, Poisson’s Equation, Electric field, Central potential, Work functions
Scope of the Article: Emulation and Simulation Methodologies for IoT