Analytical Modeling and Simulation of Nanoscale Fully Depleted Dual Metal Gate SOI MOSFET
Prashant Kumar1, Munish Vashishath2, P. K. Bansal3
1Prashant Kumar, Department of Electronics Engineering, J.C. BOSE University of Science & Technology, Faridabad, Haryana, India.
2Munish Vashishath, Department of Electronics Engineering, J.C. BOSE University of Science & Technology, Faridabad, Haryana, India.
3P.K. Bansal, Department of Electronics Engineering, MIMIT, Malout, Punjab, India.
Manuscript received on 15 August 2019 | Revised Manuscript received on 21 August 2019 | Manuscript published on 30 August 2019 | PP: 2946-2950 | Volume-8 Issue-10, August 2019 | Retrieval Number: J11130881019/2019©BEIESP | DOI: 10.35940/ijitee.J1113.0881019
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: The demand and development of scaled semiconductors devices for upcoming challenges in VLSI technology is unending. CMOS technology plays a very important role in fulfilling this criterion. The conventional MOSFET exhibits short channel effects (SCE) and performance degradation when scaled down in the nanometer regime. In order to meet the required enhanced performance and to further increase the device density new materials and new device structures have been developed. This paper analyses the performance characteristics of one of such improved device structure i.e Fully Depleted Silicon over Insulator (FDSOI) which also incorporate the gate having two metals of different work function specifically called Dual Material Gate (DMG) SOI MOSFET. The analytical modeling for this device structure has also been carried out. The simulation characteristics match closely with analytical results and as the surface potential profile of the device has step function in ensures that this device effectively reduces the SCE.
Index Terms: DIBL, DMG, Ion/Ioff, SCE, SOI, TCAD.
Scope of the Article: Network Modelling and Simulation