Consequences of Body-Biasing Technique on SRAM Memory
Mukesh kumar1, J.S. Ubhi2
1Mukesh Kumar, Department of ECE, Sant Longowal Institute of Engineering and Technology, Longowal, Sangrur, India.
2Dr. J. S. Ubhi, Department of ECE, Sant Longowal Institute of Engineering and Technology, Longowal, Sangrur, India.
Manuscript received on 02 August 2019 | Revised Manuscript received on 09 August 2019 | Manuscript published on 30 August 2019 | PP: 2922-2925 | Volume-8 Issue-10, August 2019 | Retrieval Number: I8637078919/2019©BEIESP | DOI: 10.35940/ijitee.I8637.0881019
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: The circuit changes the threshold voltage effectively with a definite delay and power by altering the body biasing of the transistors. The body bias is employed to govern the frequency and leakage of the memory device. The threshold voltage of individual transistor is decreases by applying the reverse body bias (RBB) and increases with forward body bias (FBB). This paper presents the viability of RBB to decrease the leakage power and increase in the speed of operations for SRAM circuit. The investigation of RBB dependencies on various performance parameters are analyzed. It is observed that the leakage power improves by 30.32% on applying RBB voltage compared to zero body bias while the transient power increases by 3.22% but decrease of delay by 84.56% dominates on it. Because of this the overall energy consumption reduces by 84.06%. Further the simulation work is carried out to see effect of supply voltage variation on leakage power at different RBB voltage and temperature. Therefore, the RBB scheme is beneficial for devices of low leakage, low energy and high speed of operation but this RBB voltage is limited by band-to-band tunneling current.
Keywords: Index terms: RBB, Frequency, leakage power, delay
Scope of the Article: Frequency Selective Surface