Investigation of Saw Devices with Buffer Layer on Si Substrates
Jaya Krishna Akella1, Kireeti Sarvardhapu2, Sai Krishna3
1Jaya Krishna Akella, Department of ECE, VLSI Koneru Lakshmaiah Education Foundation, Guntur (Andhra Pradesh), India.
2Kireeti Sarvardhapu, Department of ECE, VLSI Koneru Lakshmaiah Education Foundation, Guntur (Andhra Pradesh), India.
3Sai Krishna, Department of ECE, Koneru Lakshmaiah Education Foundation, Guntur (Andhra Pradesh), India.
Manuscript received on 01 May 2019 | Revised Manuscript received on 15 May 2019 | Manuscript published on 30 May 2019 | PP: 2166-2169 | Volume-8 Issue-7, May 2019 | Retrieval Number: G6211058719/19©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: This paper presents on Investigation of behavior of buffer layer on the Conventional SAW devices and their dispersion characteristics. The Conventional SAW devices designed on non-piezoelectric substrate with buffer layer exhibit different characteristics. The SAW device has the arrangement of Patterned ZnO/IDT/AlN/Si and AlN/ZnO as the buffer layer and their corresponding analysis are done by 2D Finite element model Simulation. Different Characteristics such as temperature dispersion and Phase velocities with respect to varying a buffer layer height are taken and mentioned which produces optimal results are proposed in the paper.
Keyword: SAW/BAW, IDT, TCF, FEM.
Scope of the Article: Optical Devices.