Drain Characteristic Analysis of High Electron Mobility Transistors (MOSHEMT)
Revathi M
Revathi M, VLSI Design, School of Computing, SASTRA Deemed to Be University, Thanjavur (Tamil Nadu), India.
Manuscript received on 01 May 2019 | Revised Manuscript received on 15 May 2019 | Manuscript published on 30 May 2019 | PP: 541-544 | Volume-8 Issue-7, May 2019 | Retrieval Number: G5108058719/19©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: A High-electron-mobility transistor, otherwise called a field-effect transistor consolidating an intersection between two materials with various band holes as the channel rather than a doped region. While lately, gallium nitride HEMTs have pulled in consideration because of their powerful execution. In this paper a MOSHEMT device is designed and afterward break down the device DC characteristic. MOSHEMT is a modified structure of HEMT. In MOSHEMT an oxide layer (Hf02) is embedded to the device. Characteristic dissect of device include the breaking down of channel current, gate leakage current and furthermore the Ioff/Ion proportion of the device. HEMT transistors can work at higher frequencies.
Keyword: HEMT, MOSHEMT, 2 DEG region, Gallium arsenide, Gallium nitride, oxide layer (HfO2).
Scope of the Article: Predictive Analysis.