RF Front-End Design of Inductorless CMOS LNA Circuit with Noise Cancellation Method for IoT Applications
Mahesh Mudavath1, K Hari Kishore2
1Mahesh Mudavath, Research Scholar, Koneru Lakshmaiah Education Foundation, Vaddeswaram, Guntur, Andhra Pradesh, India.
2K Hari Kishore, Professor, Department of Electronics and Communications Engineering, Koneru Lakshmaiah Education Foundation, Vaddeswaram, Guntur, Andhra Pradesh, India.
Manuscript received on 04 April 2019 | Revised Manuscript received on 11 April 2019 | Manuscript Published on 26 April 2019 | PP: 176-183 | Volume-8 Issue-6S April 2019 | Retrieval Number: F60480486S19/19©BEIESP
Open Access | Editorial and Publishing Policies | Cite | Mendeley | Indexing and Abstracting
© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open-access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: This manuscript deals the RF Front-End Design of Inductorless CMOS LNA Circuit with Noise Cancellation method for IoT Applications. A reconfigurable, Inductorless, wideband, LNA for multi-standard wireless applications among a less-area, single-chip, and RF front-end are presented in this manuscript. In this context the proposed LNA approaches two paths in parallel: CS (common-source) path and CG (common-gate) path. Here CS path is liable for providing adequate gain, at the same time the CG path achieved as the matching of input impedance. In this CG path the noise involvement can be removed by noise cancellation technique consequently, on the whole Noise Figure is enhanced. The mismatch of phase among the 2 different paths is moreover quantitatively investigated with analyze to its effect on NF and gain. The methodical values agreed to fit with their simulation values. The considered LNA designed in a CMOS 45nm technology process. The simulated result with the frequency range of 1.04GHz with bandwidth of 3dB gain has achieved 22 dB gain and a low NF of 1.9 dB. The obtained 1dB compression point (IP1dB) is -22.4dBm and also LNA consumes only 6.5mA with 1.2V power supply.
Keywords: Low Noise Amplifier, CMOS Technology, Inductorless, Noise Cancellation Method, Noise Figure, IoT, WSN, Common Gate Path and Common Source Path.
Scope of the Article: Communication