Single Stage 38 GHz LNA using 0.1 µm GaAs HEMT
Lakshmi Balla1, Venkata Krishna Sharma Gollakota2
1Lakshmi Balla, Department of EECE, Gitam Deemed to be University, Visakhapatnam (Andhra Pradesh), India.
2Venkata Krishna Sharma Gollakota, Department of EECE, Gitam Deemed to be University, Visakhapatnam (Andhra Pradesh), India.
Manuscript received on 23 November 2019 | Revised Manuscript received on 11 December 2019 | Manuscript Published on 30 December 2019 | PP: 274-276 | Volume-9 Issue-2S3 December 2019 | Retrieval Number: B10701292S319/2019©BEIESP | DOI: 10.35940/ijitee.B1070.1292S319
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open-access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: Design of a 38 GHz low noise amplifier using a single stage common source (SSCS) with source degenerated with inductor topology with gain of 9 dB and noise figure (NF) of 1.5 dB using 0.1 µm GaAs pHEMT as active device is proposed in this paper. CS with source degenerated with inductor topology of 0.1 µm GaAs pHEMT resulted a very low NF compared to other HEMT technologies as well as other CMOS technologies at this RF range.
Keywords: Pseudomorphic High Electron Mobility Transistor (Phemt); Gallium Arsenide (Gaas); Low Noise Amplifier; Inductive Source Degeneration; CS Topology; Radio Frequency (RF).
Scope of the Article: Low-power design