Different LNA Topologies Designed with HEMT Technologies at Ka and Q Bands
Lakshmi Balla1, Venkata Krishna Sharma Gollakota2, Sandhya Teku3
1Lakshmi Balla, Department of EECE, Gitam deemed to be University, Visakhapatnam (Andhra Pradesh), India.
2Venkata Krishna Sharma Gollakota, Department of EECE, Gitam deemed to be University, Visakhapatnam (Andhra Pradesh), India.
3Sandhya Teku, Department of ECE, Vignan’s Institute of Engineering for Women, Visakhapatnam (Andhra Pradesh), India.
Manuscript received on 24 November 2019 | Revised Manuscript received on 12 December 2019 | Manuscript Published on 30 December 2019 | PP: 374-377 | Volume-9 Issue-2S3 December 2019 | Retrieval Number: B10691292S319/2019©BEIESP | DOI: 10.35940/ijitee.B1069.1292S319
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open-access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: The main drawback of designing LNA with CMOS technology is the high power dissipation. This problem can be overcome by designing LNA with HEMT technology. In this paper we went through several LNA‘s designed with different HEMT technologies from the past few decades. Assessment of different LNA topologies with HEMT technologies around ka and Q band is performed in this paper along with EM simulations of PP1010 unconditionally stable LNA.
Keywords: Complementary Metal oxide semiconductor (CMOS); Low Noise Amplifier (LNA); Radio Frequency (RF); High Electron Mobility Transistor (HEMT).
Scope of the Article: Low-power design