Performance of Various SiC Devices and their Behavior in DC/DC Converter
K. V. R. Swathi1, U. Salma.2
1K. V. R. Swathi, Department of EEE, Anil Neerukonda Institute of Technology and Sciences, Visakhapatnam (Andhra Pradesh), India.
2Dr. U. Salma, Department of EECE, GITAM, Visakhapatnam (Andhra Pradesh), India.
Manuscript received on 22 November 2019 | Revised Manuscript received on 10 December 2019 | Manuscript Published on 30 December 2019 | PP: 62-67 | Volume-9 Issue-2S3 December 2019 | Retrieval Number: B10151292S319/2019©BEIESP | DOI: 10.35940/ijitee.B1015.1292S319
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open-access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: An extensive research on nano materials was carried out and the properties of Si were studied, Post study it was felt that there must be a material which exhibits semiconducting properties of Si with high breakdown voltage and work till high temperature range. Silicon Carbide (SiC) devices provided the answer for this. These devices are well known for high frequency, high voltage, high temperature and high power for their good material properties compared with silicon power MOSFET. In this paper, a study was conducted on various Silicon Carbide devices available in the market and the comparative performance of these devices were analysed. Furthermore there is a comparison of N channel silicon MOSFET device and silicon carbide device placed in bidirectional DC/DC buck converter in which Silicon Carbide device exhibit superior properties than Si device.
Keywords: Silicon Carbide Devices, Bi Directional Dc/dc Buck Converter, Silicon Mosfet, Power Loss.
Scope of the Article: Optical Devices