Effect of CSDG MOSFET based High Pass Filter on Signaling
Llewellyn Naidoo1, Viranjay M. Srivastava2
1Llewellyn Naidoo, Department of Electronic Engineering, Howard College, University of Kwa Zulu-Natal, Durban, South Africa.
2Viranjay M. Srivastava, Department of Electronic Engineering, Howard College, University of Kwa Zulu Natal, Durban, South Africa.
Manuscript received on 03 April 2019 | Revised Manuscript received on 10 April 2019 | Manuscript Published on 13 April 2019 | PP: 91-96 | Volume-8 Issue-6C April 2019 | Retrieval Number: F12240486C19/19©BEIESP
Open Access | Editorial and Publishing Policies | Cite | Mendeley | Indexing and Abstracting
© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open-access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: This research work looks at the design of active high pass filter that can be used in mobile communication systems. These systems make use of trans-receiver system. This type of system is commonly used in handsets. In this research work the proposed filter has been designed with a Cylindrical Surrounding Double-Gate (CSDG) MOSFET and operates at cutoff frequency of 100 GHz (0.1 THz). A CSDG MOSFET is an extension of DG MOSFET technology. It is structured by rotation of DG MOSFET with respect to its reference point to form a hollow cylinder. It consists of two gates, one drain and one source. The gain, phase, and return loss of the high pass filter has been analyzed with and without CSDG MOSFET using electronic device simulator. Finally, it has been demonstrated that the third order high pass filters performs better with the CSDG MOSFET.
Keywords: Active High Pass Filter, CSDG MOSFET, Gain, Phase, Return Loss, Microelectronics, VLSI.
Scope of the Article: Communication