Loading

High Speed Novel Design of Sram for Highly Reliable Applications
D. Naresh1, S. Butchi Babu2, S. Baba Fariddin3, S. Ravindra4

1D. Naresh, Assistant Professor, Department of ECE, Lakireddy Balireddy College of Engineering, Mylavavaram (Andhra Pradesh), India.

2S. Butchi Babu, Assistant Professor, Department of ECE, Vikas College of Engineering and Technology, Nunna, Vijayawada (Andhra Pradesh), India.

3S. Baba Fariddin, Assistant Professor, Department of ECE, St. Mary’s Women’s Engineering College, Guntur (Andhra Pradesh), India.

4S. Ravindra, Assistant Professor, Department of ECE, St. Mary’s Women’s Engineering College, Guntur (Andhra Pradesh), India.

Manuscript received on 22 November 2019 | Revised Manuscript received on 10 December 2019 | Manuscript Published on 30 December 2019 | PP: 119-122 | Volume-9 Issue-2S3 December 2019 | Retrieval Number: B10291292S319/2019©BEIESP | DOI: 10.35940/ijitee.B1029.1292S319

Open Access | Editorial and Publishing Policies | Cite | Mendeley | Indexing and Abstracting
© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open-access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: Modern ICs are enormously complicated due to decrease in device size and increase in chip density involving several millions of transistors per chip. The rules for manufactured leads to a tremendous increase in complexity due to the amount of power dissipation are increased. In this paper, the design of novel SRAM is implemented for the highly reliable applications. For high-speed memory applications such as cache, a SRAM is often used. Power consumption is the key parameter for an SRAM memory design (SRAM). New tag generation system designed for integrity checking of SRAM. A single read operation to a crossbar SRAM that can be used for integrity checking. Reliability of the system is measured for varying conditions of device parameters, operating temperatures, load resistances, and read voltage.

Keywords: SRAM (Static Random Access Memory), DRAM (Dynamic Random Access Memory), RAM (Random Access Memory).
Scope of the Article: High Speed Networks