Analysis of Inverter using Single Electron Transistor
NitinBansal1, Brijendra Mishra2, Pankaj Kumar Mishra3, Vivek Singh Kushwah4, Sanjay Jain5, Rishi Sharma6
1NitinBansal, Amity School of Engineering and Technology Amity University Madhya Pradesh, Maharajpura Dang, Gwalior (MP), India.
2Brijendra Mishra, Amity School of Engineering and Technology Amity University Madhya Pradesh, Maharajpura Dang, Gwalior (MP), India.
3Pankaj Kumar Mishra, Amity School of Engineering and Technology Amity University Madhya Pradesh, Maharajpura Dang, Gwalior (M.P), India.
4Vivek Singh Kushwah, Amity School of Engineering and Technology Amity University Madhya Pradesh, Maharajpura Dang, Gwalior (M.P), India.
5Sanjay Jain, Hindustan College of Science & Technology,Farah, Mathura (U.P), India.
6Rishi Sharma, MEMS and Microsensor Group, CEERI, Pilani, (Rajasthan), India
Manuscript received on 01 May 2019 | Revised Manuscript received on 15 May 2019 | Manuscript published on 30 May 2019 | PP: 117-119 | Volume-8 Issue-7, May 2019 | Retrieval Number: F3843048619/19©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: This paper presents an analytical model Inverter based on the theory of single electron transistor(SET).The proposed design is very flexible such that it can be used for single gate, multi-gate, symmetric, asymmetric devices and most importantly it can also consider the effect of background charge. It can also be used for large voltage range of drain-source voltage irrespective of the bias conditions. The proposed design has been simulated with SPICE and the characteristics produced by the proposed design have been verified against Monte Carlo simulator SIMON.
Keyword: Coulomb Blockade, Monte Carlo Simulator SIMON, Single-Electron Transistor.
Scope of the Article: Structural Reliability Analysis.